document number: 89419 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage supressors smbj3v3 vishay general semiconductor new product features ? uni-directional polarity only ? peak pulse power: 600 w (10/1000 s) ? excellent clamping capability ? very fast response time ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applciations use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units specifically for protecting 3.3 v supplied sensitive equipment against transient overvoltages. mechanical data case: do-214aa (smbj) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end notes (1) non-repetitive curren t pulse, per fig. 1 (2) mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal primary characteristics v wm 3.3 v p ppm 600 w i fsm 60 a t j max. 175 c do-214aa (smbj) maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol value unit peak pulse powe r dissipation p ppm (1)(2) 600 w peak pulse current with a 10/1000 s waveform (fig. 1) i pp 50 a peak pulse current with a 8/20 s waveform (fig. 1) i ppm 200 a non-repetitive peak forward surge cu rrent 8.3 ms single half sine-wave i fsm (2) 60 a power dissipation on infinite heatsink, t l = 75 c p d 5w operating junction and storage temperature range t j , t stg - 65 to + 175 c electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t min. maximum reverse leakage current i r at v wm max. maximum clamping voltage v c at i pp 10/1000 s maximum clamping voltage v c at i ppm 8/20 s typical temp. coefficient of v br typical junction capacitance c j at 0 v 1 mhz vma a v vava (10 -4 /c) pf smbj3v3 kc 4.1 1.0 200 3.3 7.3 50 10.3 200 - 5.3 5200
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89419 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 smbj3v3 vishay general semiconductor new product note (1) thermal resistance from junction to le ad - mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal (2) thermal resistance from junction to ambient - mounted on the recommended pcb pad layout ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - pulse waveform fig. 2 - peak pulse power rating curve fig. 3 - relative variation of leakage current vs. junction temperature fig. 4 - clamping voltage vs. peak pulse current (t j initial = 25 c) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to lead r ? jl (1) 20 c/w typical thermal resistance, junction to ambient r ? ja (2) 100 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode smbj3v3-m3/52 0.096 52 750 7" diameter plastic tape and reel smbj3v3-m3/5b 0.096 5b 3200 13" diam eter plastic tape and reel 0 50 100 150 t d 0 1.0 2.0 3.0 4.0 t r = 8 s t r = 10 s i ppm - peak pulse current, % i rsm t - time (ms) t d = 1000 s t d = 20 s peak value i ppm half value - i ppm i pp 2 t j = 25 c pulse width (t d ) is defined as the point where the peak current decays to 50 % of i ppm 10 1 0.1 0.01 0.1 1 10 p ppm - peak pulse p ower (kw) t d - pulse width (ms) 0.1 1 10 0 25 50 75 100 125 150 175 t j - junction temperature (c) i r (t j )/i r (t j = 25 c) 4 6 8 10 0.1 1 10 100 1000 i pp (a) clamping voltage (v) 10/1000 s 8/20 s
document number: 89419 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 smbj3v3 vishay general semiconductor new product fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance fig. 7 - typical peak forward voltage drop vs. peak forward current package outline dimensions in inches (millimeters) 2000 2500 3000 3500 4000 4500 5000 5500 0 0.5 1 1.5 2 2.5 3 3.5 reverse voltage (v) c j - junction capacitance (pf) 100 10 0.01 0.1 1 1 10 100 1000 t - pulse duration (s) transient thermal impedance (c/w) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v f - forward voltage drop (v) i f - peak forward current (a) t j = 175 c t j = 25 c do-214aa (smb-j-bend) mounting pad layout 0.160 (4.06) 0.180 (4.57) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.205 (5.21) 0.220 (5.59) 0 (0) 0.008 (0.2) 0.130 (3.30) 0.155 (3.94) 0.084 (2.13) 0.096 (2.44) 0.077 (1.95) 0.086 (2.20) cathode band 0.220 ref. 0.060 (1.52) min. 0.086 (2.18) min. 0.085 (2.159) max.
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